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  • Know Res., 2015, 2(2),  pp 104-107  

    DOI:10.7598/kor2015.141

    Research Article

    PbS Thin Films Using Cost Effective Chemical Method and Enhancement in its Conductance

  • ANGEL SUSAN CHERIAN, J. V. EMIL, M. C. THOMSON, C. V. RASHIDA and S. MALU
  • Department of Physics, Marthoma College, Thiruvalla, Kerala, India
  • Abstract

    In the present work the PbS thin films were coated on a glass substrate using chemical bath deposition (CBD) technique which is a scalable technique that can be employed for large area devices. PbS is a direct narrow gap semiconductor which has also been used as photo resistance, diode lasers, humidity and temperature sensors, decorative coatings and solar control coatings. At room temperature, its energy band gap is approximately 0.37?0.4 eV. The reactive substances used to obtained the PbS layers were (Pb(NO3)2), (NaOH), (SC(NH2)2) and H2O for different concentrations at constant room temperature. The structure was determined by X-ray diffraction studies. The thickness of these films was controlled to around 200 nm on changing the concentrations of lead nitrate and thiourea of the reaction solution. When the concentration of lead nitrate is varied from 0.15 o 0.19 M, the resistance decreased considerably which can even be measurable using multimeter. This shows that the films are not resistive. The film was found to be of p-type by hot probe method

    Keywords

    Thin film, Semiconductor, PbS, Chemical bath deposition

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